| PART |
Description |
Maker |
| RM1200HE-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM1200DB-34S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM1200DB-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| FZ600R65KE3 |
high insulated module
|
Infineon Technologies AG
|
| CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
|
| FM400TU-3A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| FM600TU-3A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| UFB60FA40P10 |
Insulated Ultrafast Rectifier Module, 60 A
|
Vishay Siliconix
|
| UFB200FA60P10 |
Insulated Ultrafast Rectifier Module, 200 A
|
Vishay Siliconix
|
| UFB120FA20P10 |
Insulated Ultrafast Rectifier Module, 120 A
|
Vishay Siliconix
|
| UFL120FA60P |
Insulated Ultrafast Rectifier Module, 120 A
|
Vishay Siliconix
|
